Gallium nitride (GaN) ICs
Maximize power density and efficiency with our portfolio of GaN power devices for every power level
New products
650-V 270-mΩ GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 2.2
650-V 120-mΩ GaN FET with integrated driver and protection
Approx. price (USD) 1ku | 3.25
650V 120mΩ GaN FET with integrated driver, protection and current sensing
Approx. price (USD) 1ku | 3.25
650V 270mΩ GaN FET with integrated driver, protection and current sensing
Approx. price (USD) 1ku | 2.2
650V 170mΩ GaN FET with integrated driver, protection and current sensing
Approx. price (USD) 1ku | 3.18
Advantages of our GaN technology
Faster switching speed than discrete GaN FETs
Our GaN FETs with integrated drivers can reach switching speeds of 150 V/ns. These switching speed, combined with a low-inductance package, reduce losses, enable clean switching and minimize ringing.
Smaller magnetics, higher power density
Enabled by faster switching speeds, our GaN devices can help you achieve switching frequencies over 500 kHz, which results in up to 60% smaller magnetics, enhanced performance and lower system cost.
Built for reliability
Our GaN devices are designed to keep high-voltage systems safe thanks to a proprietary GaN-on-Si process, more than 40 million hours of reliability testing and protection features.
Dedicated design tools and resources
Shorten your time to market with our GaN design resources, including power loss calculators, PLECS models for circuit simulation and evaluation boards for testing and operation in larger systems.
Why choose GaN
Understanding GaN technology
GaN offers higher power density, more reliable operation and improved efficiency over traditional silicon-only based solutions. Head to our technology page to learn more about GaN as a power transistor technology, discover featured GaN applications, hear from our customers and see for yourself how our GaN products can help you minimize the weight, size and cost of your next power design.
Tools and resources to assist with your design
We offer numerous resources to assist with your design and help you choose the right device for your application. Our power loss calculation tools can help you with product selection by showing power losses for selected devices at user-specified parameters. Our PLECS models allow you to simulate the operation of GaN devices to estimate the FET junction temperature and allow for an adjustable slew-rate during turn-on. Our half-bridge evaluation daughter cards are also available for testing and operation in larger systems.
Technical resources
Thermal Performance of QFN12x12 Package for 600V, GaN Power Stage (Rev. A)
Direct-drive configuration for GaN devices (Rev. A)
Third quadrant operation of GaN
Discover featured applications
Reach 80 Plus® Titanium standards with 96.5% total energy efficiency and over 100-W/in^3 power density with our GaN technology
Design telecom and server systems that support storage, cloud-based applications, central computing power and more using our GaN devices. To help meet your design requirements for energy efficiency, our designs can reach 80® Plus Titanium standards and enable power-factor correction (PFC) efficiencies over 99%.
Benefits
- >99% efficiency enabled by GaN in a totem-pole bridgeless PFC topology
- Switching frequencies >500 kHz in isolated DC/DC converters, resulting in decreased magnetics
- Integrated gate drivers reduce parasitic losses and make system-level design easier
Featured resources
- PMP23069 – 3-kW, 180-W/in3 single-phase totem-pole bridgeless PFC reference design with 16-A max input
- PMP23126 – 3-kW phase-shifted full bridge with active clamp reference design with > 270-W/in3 power density
- PMP40988 – Variable-frequency, ZVS, 5-kW, GaN-based, two-phase totem-pole PFC reference design
- LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
- LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
- LMG3411R150 – 600-V 150-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection
Achieve beyond 1.2-kW/L power density in bidirectional AC/DC power conversion systems with our GaN technology
Develop systems powered by solar and wind energy with our GaN devices, which help you design smaller, more efficient AC/DC inverters and rectifiers and DC/DC inverters. With GaN-enabled bidirectional DC/DC conversion, you can integrate energy storage systems into solar inverters, reducing energy dependency on the grid.
Benefits
- 3x higher power density (>1.2 kW/L) and lower weight than existing AC/DC and DC/DC converters.
- The fast-switching properties of GaN at 140 kHz increase 20% higher power density over SiC FETs
- System cost parity because of lower-cost magnetics versus 2-level SiC topology
Featured resources
- TIDA-010210 – 11-kW, bidirectional, three-phase ANPC based on GaN reference design
- LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
- LMG3522R030-Q1 – Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
- LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
Enable higher channel density and reduced AC/DC converter size in battery tester systems with our GaN technology
Decrease the size of AC/DC power supplies with our GaN FETs with integrated gate drivers. Our GaN devices switch at a higher frequency than MOSFETS and SiC FETs, drastically improving the tester channel density of the test equipment and enabling faster power-supply transient response time.
Benefits
- >99% efficiency enabled by GaN in a totem-pole bridgeless PFC topology
- >200-kHz switching frequency in the DC/DC stage, enabling faster charge-to-discharge transition within 1 ms
- Integrated drivers reduce parasitic losses, enabling easier system-level design
Featured resources
- TIDM-02008 – Bidirectional high density GaN CCM totem pole PFC using C2000™ MCU
- PMP40690 – 4-kW interleaved CCM totem pole bridgeless PFC reference design using C2000™ MCU and GaN
- LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
- LMG3410R070 – 600-V 70mΩ GaN with integrated driver and protection
Enable high power density in electric vehicles with our GaN technology
The next generation of single-phase AC, 400-V on-board chargers (OBCs) and high-to-low-voltage DC/DC converters in hybrid-electric (HEV) and electric vehicles (EV) are using GaN power devices to switch at higher frequencies and reduce the size of magnetics, translating to higher power density compared to silicon and SiC-based OBCs.
Benefits
- 3.8-kW/L power density, which means more power than SiC at the same volume
- >500-kHz switching frequency for CLLLC and 120-kHz for PFC
- 96.5% combined system-level efficiency
- Integrated gate driver simplifies system-level design
Featured resources
- LMG3522R030-Q1 – Automotive 650-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
- GaN-Based, 6.6-kW, Bidirectional, Onboard Charger Reference Design – Test report
- Thermal Design and Performance of Top-Side Cooled QFN 12x12 Package – Application note
- POWERSTAGE-DESIGNER – Power Stage Designer™ software tool of most commonly used switchmode power supplies
Realize higher power efficiency and a smaller form factor in PFC power stages for heating, ventilation and air conditioning (HVAC) and appliances with our GaN devices
Power-factor correction (PFC) power stages are necessary for heating, ventilating and air conditioning (HVAC) systems to meet new energy standards, like EN6055. GaN power stages, when compared with insulated-gate bipolar transistors (IGBTs), have higher efficiency, which reduces magnetics, heat-sink size and total system cost.
Benefits
- High switching frequency up to 60 kHz reduces the size of magnetics
- Reduced switching losses result in power stages with efficiency >99%
- Small size and the ability to be cooled naturally reduce design size and cost
Featured resources
- TIDA-010203 – 4-kW single-phase totem pole PFC reference design with C2000 and GaN
- TIDA-010236 – 4-kW GaN totem-pole PFC reference design for appliances
- LMG3422R030 – 600-V 30-mΩ GaN FET with integrated driver, protection and temperature reporting
- LMG3422R050 – 600-V 50-mΩ GaN FET with integrated driver, protection and temperature reporting
Design & development resources
11-kW, bidirectional, three-phase ANPC based on GaN reference design
This reference design provides a design template for implementing a three-level, three-phase, gallium nitride (GaN) based ANPC inverter power stage. The use of fast switching power devices makes it possible to switch at a higher frequency of 100 kHz, reducing the size of magnetics for the filter (...)